1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings ixfk ixfn v dss t j = 25 c to 150 c 100 100 v v dgr t j = 25 c to 150 c; r gs = 1 m 100 100 v v gs continuous 20 20 v v gsm transient 30 30 v i d25 t c = 25 c 100 150 a i d120 t c = 120 c, limited by external leads 76 - a i dm t c = 25 c, pulse width limited by t jm 560 560 a i ar t c = 25 c7575a e ar t c = 25 c3030mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 500 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 - c v isol 50/60 hz, rms t = 1 min - 2500 v~ i isol 1 ma t = 1 s - 3000 v~ m d mounting torque 0.9/6 1.5/13 nm/lb.in. terminal connection torque - 1.5/13 nm/lb.in. weight 10 30 g hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low t rr features international standard packages jedec to-264 aa, epoxy meet ul 94 v-0, flammability classification minibloc with aluminium nitride isolation low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance fast intrinsic rectifier applications dc-dc converters synchronous rectification battery chargers switched-mode and resonant-mode power supplies dc choppers temperature and lighting controls low voltage relays advantages easy to mount space savings high power density to-264 aa (ixfk) s g d d s g s g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source s g s d symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 100 v v gh(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = 0.8 ? v dss t j = 25 c 400 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 75 a 12 m pulse test, t 300 s, duty cycle d 2 % 92803g(8/96) minibloc, sot-227 b (ixfn) e153432 (tab) v dss i d25 r ds(on) ixfk100n10 100 v 100 a 12 m ixfn150N10 100 v 150 a 12 m t rr 200 ns ixys reserves the right to change limits, test conditions, and dimensions.
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 50 a, pulse test 80 s c iss 9000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 3200 pf c rss 1800 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 75 a 60 ns t d(off) r g = 1 (external), 100 ns t f 60 ns q g(on) 360 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 75 a 75 nc q gd 180 nc r thjc to-264 aa 0.25 k/w r thck to-264 aa 0.15 k/w r thjc minibloc, sot-227 b 0.24 k/w r thck minibloc, sot-227 b 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v ixfk 100 100 a ixfn 150 150 a i sm repetitive; ixfk 100 400 a pulse width limited by t jm ixfn 150 600 a v sd i f = 100 a, v gs = 0 v, 1.75 v pulse test, t 300 s, duty cycle d 2 % t rr 150 200 ns q rm 0.6 c i rm 8a i f = 25 a -di/dt = 100 a/ s, v r = 50 v millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b ixfk 100n10 ixfn 150N10 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4 ? 2000 ixys all rights reserved ixfk 100n10 ixfn 150N10 fig. 1 output characteristics fig. 2 input admittance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 25 50 75 100 125 150 175 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i d - amperes 0 40 80 120 160 200 240 280 320 r ds(on) - normalized 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v gs - volts 012345678910 i d - amperes 0 50 100 150 200 250 300 t j = 125 c v ds - volts 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i d - amperes 0 50 100 150 200 250 300 350 400 5v v gs = 10v v gs = 15v i d = 75a bv dss v gs(th) 6v 8v 9v v gs = 10v 7v t j = 25 c t j = 125 c t j = 25 c 150N10 100n10
4 - 4 ? 2000 ixys all rights reserved ixfk 100n10 ixfn 150N10 fig.7 gate charge characteristic curve fig.8 capacitance curves fig.9 source current vs. source to drain voltage fig.10 transient thermal impedance time - seconds 0.001 0.01 0.1 1 thermal response - k/w 0.01 0.1 v ds - volts 0 5 10 15 20 25 capacitance - pf 0 2000 4000 6000 8000 10000 12000 c oss c iss gate charge - ncoulombs 0 50 100 150 200 250 300 350 400 v gs - volts 0 2 4 6 8 10 12 v ds = 50v i d = 75a i g = 1ma c rss f = 1mhz v ds = 25v v sd - volt 0.00 0.25 0.50 0.75 1.00 1.25 1.50 i s - amperes 0 25 50 75 100 125 150 t j = 25 c t j = 125 c 0.5
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